PART |
Description |
Maker |
DWBW2F7S15 DWBW3F7S15 DWBW3F8S25 DWBW2F8S25 |
Bandsplitters 50 GHz Channel Spacing
|
JDS Uniphase Corporatio... JDS Uniphase Corporation
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APT20M38SVFR APT20M38BVFRG APT20M38BVFR06 APT20M38 |
Power FREDFET; Package: D3 [S]; ID (A): 67; RDS(on) (Ohms): 0.038; BVDSS (V): 200; 67 A, 200 V, 0.038 ohm, N-CHANNEL, Si, POWER, MOSFET Power FREDFET; Package: TO-247 [B]; ID (A): 67; RDS(on) (Ohms): 0.038; BVDSS (V): 200; 67 A, 200 V, 0.038 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247AD Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
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Microsemi, Corp. ADPOW[Advanced Power Technology]
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SUM09MN20-270 SUM09N20-270 |
N-Channel 200-V (D-S) 175C MOSFET N-Channel 200-V (D-S) 175 Degree Celcious MOSFET
|
VISAY[Vishay Siliconix] Vishay Intertechnology,Inc.
|
SUM27N20-78 |
N-Channel 200-V (D-S) 175C MOSFET From old datasheet system N-Channel 200-V (D-S) 175C MOSFET
|
VISAY[Vishay Siliconix]
|
NC503SM-15 |
Surface Mount Noise Sources 200 kHz to 2 GHz
|
Micronetics, Inc.
|
NC504SM-28 |
Surface Mount Noise Sources 200 kHz to 3.5 GHz
|
Micronetics, Inc.
|
NC504SM-15 |
Surface Mount Noise Sources 200 kHz to 3.5 GHz
|
Micronetics, Inc.
|
NC503SM-28 |
Surface Mount Noise Sources 200 kHz to 2 GHz
|
Micronetics, Inc.
|
CM200DY-24H |
Dual IGBTMOD 200 Amperes/1200 Volts 200 A, 1200 V, N-CHANNEL IGBT
|
Powerex, Inc. Powerex Power Semiconductors
|
8485A 8485D Q8486D W8486A R8486A Q8486A R8486D E44 |
8485A Power Sensor, 50 MHz to 26.5 GHz 8485D Diode Power Sensor, 50 MHz to 26.5 GHz Q8486D Waveguide Power Sensor, 33 GHz to 50 GHz W8486A Waveguide Power Sensor, 75 GHz to 110 GHz R8486A Thermocouple Waveguide Power Sensor, 26.5 GHz to 40 GHz Q8486A Thermocouple Waveguide Power Sensor, 33 GHz to 50 GHz R8486D Waveguide Power Sensor, 26.5 GHz to 40 GHz E4412A Wide Dynamic Range Power Sensor, E-Series E4413A Wide Dynamic Range Power Sensor, E-Series V8486A V-band Power Sensor, 50 GHz to 75 GHz 8482B High-Power Sensor, 100 kHz to 4.2 GHz, 25W 8487A Power Sensor, 50 MHz to 50 GHz 8482H Power Sensor, 100 kHz to 4.2 GHz, 3 W 8481D Diode Power Sensor, 10 MHz to 18 GHz
|
Agilent (Hewlett-Packard)
|
FRK9260R FRK9260D FRK9260H |
26A, -200V, 0.200 Ohm, Rad Hard, P-Channel Power MOSFETs 26 A, 200 V, 0.2 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-204AE 26A/ -200V/ 0.200 Ohm/ Rad Hard/ P-Channel Power MOSFETs
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Intersil, Corp. INTERSIL[Intersil Corporation] http://
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